| PART |
Description |
Maker |
| BSP19AT1 BSP20AT1 |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BCP68T3 BCP68T1-D |
NPN Silicon Epitaxial Transistor
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-223
|
ON Semiconductor
|
| STN4NF20L |
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| BCP68-25E6433 |
1 A, 20 V, NPN, Si, POWER TRANSISTOR SOT-223, 4 PIN
|
Infineon Technologies AG
|
| STN4NF06L |
N-channel 60 V, 0.07 Ohm, 4 A STripFET(TM) 2 Power MOSFET in SOT-223 package
|
ST Microelectronics
|
| FZT605TA |
1.5 A, 120 V, NPN, Si, POWER TRANSISTOR SOT-223, 4 PIN
|
Diodes, Inc.
|
| IRFL9014TR |
-60V Single P-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| ZVP2106G ZVP2106GTA |
TRANSISTOR MOSFET SMD SOT 223 晶体管MOSFET的贴片采用SOT 223
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes, Inc.
Diodes Incorporated
http://
|
| FQT26N03L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 5.9AI（四）|的SOT - 223
|
Fairchild Semiconductor, Corp.
|
| AUIRLL024N |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package
|
International Rectifier
|
| CZSH5-40LEADFREE |
5 A, 40 V, SILICON, RECTIFIER DIODE SOT-223, 4 PIN
|
Central Semiconductor, Corp.
|
